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Flexible and Air-Stable Near-Infrared Sensors Based on Solution-Processed
Inorganic–Organic Hybrid Phototransistors
Advanced Functional Materials  (IF18.808),  Pub Date : 2021-08-16, DOI:
10.1002/adfm.202105887
Dingwei Li, Jiaqi Du, Yingjie Tang, Kun Liang, Yan Wang, Huihui Ren, Rui Wang,
Lei Meng, Bowen Zhu, Yongfang Li



Flexible and air-stable phototransistors are highly demanded for wearable
near-infrared (NIR) image sensors. However, advanced NIR sensors via low-cost,
solution-based processes remained a challenge. Herein, high-performance
inorganic–organic hybrid phototransistors are achieved based on solution
processed n-type metal oxide/polymer semiconductor heterostructures of
In2O3/poly{5,5′-bis[3,5-bis(thienyl)phenyl]-2,2′-bithiophene-3-ethylesterthiophene]}
(PTPBT-ET). The In2O3/PTPBT-ET hybrid phototransistor combines the advantages of
both fast electron transport in In2O3 and high photoresponse in PTPBT-ET,
showing high saturation mobility of 7.1 cm2 V−1 s−1 and large current on/off
ratio of >107. As a result, the phototransistor exhibits high performance
towards NIR light sensing with a responsivity of 200 A W−1, a specific
detectivity of 1.2 × 1013 Jones, and fast photoresponse with rise/fall time of
5/120 ms. Remarkably, the hybrid phototransistor, without any passivation,
demonstrates excellent electrical stability without performance degradation even
after 160 days in air. A 10 × 10 phototransistor array is also enabled by virtue
of the high device uniformity. Lastly, flexible In2O3/PTPBT-ET phototransistor
on polyimide substrate is attained, exhibiting outstanding mechanical
flexibility up to 1000 bending/releasing cycles at a bending radius of 5 mm.
These achievements pave the way for constructing air-stable hybrid
phototransistors for flexible NIR image sensor applications.

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